Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties

Ti-doped ZnO (TZO) and Bi2O3 thin films were designed deposited by magnetron sputtering successively on ITO glass substrate to form a ZnO/Bi2O3 (TZO/Bi2O3) heterojunction. Microstructure photoelectric properties of TZO, Bi2O3, TZO/Bi2O3 tested characterized. The results showed that TZO film with hexagonal wurtzite structure was preferentially grown along the crystal plane (002), had good crystallization state, an N-type semiconductor high transmittance (90%) low resistivity (4.68 × 10−3 Ω·cm). However, sputtered in oxygen-containing atmosphere polycrystalline (111). It lower quality than P-type (68%) resistance (1.71 102 I–V curve composite it obvious heterojunction rectification effect, which indicates PN successfully formed films.